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c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . h i g h - s i d e p o w e r d i s t r i b u t i o n c o n t r o l l e r high-side driver for an external n-channel mosfet under-voltage lockout (uvlo) wrong vin input voltage protection output under-voltage protection (uvp) short-circuit protection during power-up (scp) over-current protection (ocp) shutdown function power-ok (pok) function lead free and green devices available (rohs compliant) a p l 3 5 4 0 i s a h i g h - s i d e p o w e r d i s t r i b u t i o n c o n t r o l l e r f o r a n e x t e r n a l n - c h a n n e l m o s f e t , a l l o w f o r + 1 2 v a n d + 1 9 v p o w e r - s u p p l y r a i l s . t h e w r o n g i n p u t v o l t a g e p r o t e c t i o n f u n c t i o n p r o t e c t s a w r o n g i n p u t a d a p t e r i n s e r t i o n . w h e n i n p u t v o l t a g e i s o u t o f t h e t a r g e t i n p u t v o l t a g e r a n g e , t h e i c i s o f f . f e a t u r e s g e n e r a l d e s c r i p t i o n a p p l i c a t i o n s desktop pcs t h e b u i l t - i n u n d e r - v o l t a g e p r o t e c t i o n m o n i t o r s t h e o u t p u t v o l t a g e f o r s h o r t - c i r c u i t c o n d i t i o n s . w h e n o u t p u t v o l t a g e i s l e s s t h a n 7 0 % o f v i n v o l t a g e , t h e i c w i l l b e s h u t d o w n . t h e o v e r - c u r r e n t p r o t e c t i o n m o n i t o r s t h e o u t p u t c u r r e n t b y u s i n g t h e v o l t a g e d r o p a c r o s s t h e e x t e r n a l m o s f e t ? s r d s ( o n ) . w h e n o u t p u t c u r r e n t r e a c h e s t h e t r i p p o i n t , t h e i c w i l l b e s h u t d o w n . t h e a p l 3 5 4 0 a l s o p r o v i d e s a s h o r t - c i r c u i t p r o t e c t i o n d u r i n g p o w e r - u p . t h e d e v i c e m o n i t o r s d r v a n d v o u t v o l t a g e s f o r a s h o r t - c i r c u i t d e t e c t i o n . i f a s h o r t - c i r c u i t c o n d i t i o n i s d e t e c t e d , t h e i c w i l l b e s h u t d o w n . o t h e r f e a t u r e s , i n c l u d i n g a p o k o u t p u t w h i c h i n d i - c a t e s t h a t t h e o u t p u t v o l t a g e i s r e a d y a n d a l o g i c - c o n - t r o l l e d s h u t d o w n m o d e . p i n c o n f i g u r a t i o n vin drv vout gnd 1 2 3 4 pok ocset vinsel en 8 7 6 5 sop-8 (top view) tdfn2x2-8 (top view) 1 6 5 4 3 2 8 7 pok gnd vinsel en ocset vout drv vin =exposed pad (please connect to the ground)
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 2 o r d e r i n g a n d m a r k i n g i n f o r m a t i o n n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . a b s o l u t e m a x i m u m r a t i n g s ( n o t e 1 ) symbol parameter rating unit v in vin input voltage (vin to gnd) - 0.3 to 35 v v out, v drv, v ocset, v pok, v vinsel vout, drv, pok, ocset and vinsel to gnd voltage - 0.3 to 40 v v en en to gnd voltage - 0.3 to 7 v t j maximum junction temperature 150 o c t stg s torage temperature - 65 to 150 o c t sdr maximum lead soldering temperature , 10 seconds 26 0 o c note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired. exposure to absolute maximum rating conditions for extended periods may affect device reliability. APL3540 handling code temperature range package code APL3540 k : xxxxx - date code assembly material APL3540 qb : x - date code APL3540 xxxxx 3540 x package code k : sop-8 qb : tdfn2x2-8 operating ambient temperature range i : -40 to 85 o c handling code tr : tape & reel scp threshold code 26 : 2.6v 28 : 2.8v 30 : 3.0v blanking : 3.5v assembly material g : halogen and lead free device scp threshold code APL3540 xxxxx ss 3540 x ss ss : scp threshold code ss : scp threshold code t h e r m a l c h a r a c t e r i s t i c s ( n o t e 2 ) symbol parameter typical value unit q ja junction - to - ambient resistance in f ree a ir sop - 8 tdfn2x2 - 8 150 80 o c/w note 2: q ja is measured with the component mounted on a high effective thermal conductivity test board in free air.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 3 symbol parameter range unit v in vin input voltage (vin to gnd) 10 to 26 v v en en to gnd voltage 0 to 5 v t a ambient temperature - 40 to 85 o c t j junction temperature - 40 to 125 o c r e c o m m e n d e d o p e r a t i n g c o n d i t i o n s ( n o t e 3 ) n o t e 3 : r e f e r t o t h e t y p i c a l a p p l i c a t i o n c i r c u i t e l e c t r i c a l c h a r a c t e r i s t i c s u n l e s s o t h e r w i s e s p e c i f i e d , t h e s e s p e c i f i c a t i o n s a p p l y o v e r v i n = 1 9 v , v e n = 5 v a n d t a = - 4 0 t o 8 5 o c . t y p i c a l v a l u e s a r e a t t a = 2 5 o c . APL3540 symbol parameter test conditions min. typ. max. unit under - voltage lockout (uvlo) and supply current v uvlo vin uvlo threshold voltage v in rising, t a = - 40 to 85 o c 7.0 7.5 8.0 v vin uvlo hysteresis 0.3 0.4 0.5 v t d(on) power - on delay tim e v in >v uvlo , v en =5v, and v vinsel(h) >v vinsel > v vinsel(l) 5 8.5 12 m s no load, v en =5v - 750 1200 m a i vin vin supply current no load, v en =0v - 400 600 m a wrong vin input voltage protection v vinsel(l) vinsel low detection rising threshold v in rising, ic is on, v in =10v to 21v 1.223 1.275 1.305 v vinsel low detection falling threshold v in falling, ic is off, v in =10v to 21v 1.148 1.200 1.230 v v vinsel(h) vinsel high detection rising threshold v in rising, ic is off, v in =10v to 21v 1.748 1.800 1.830 v vinsel high detection falling threshold v in falling, ic is on, v in =10v to 21v 1.673 1.725 1.755 v vinsel input current v vinsel =40v - - 1 m a vinsel low detection debounce v vinsel falling, v vinsel < v vinsel(l) - 10 - m s vinsel high detection debounc e v vinsel rising, v vinsel > v vinsel(h) - 10 - m s gate driver v drv - out drv to vout voltage v drv - v out , v in =19 4.3 4.6 4.9 v drv source current v drv =10v, v drv - v out =2.5 155 185 215 m a drv discharge resistance any fault condition and shutdown (connected f rom drv to vout), v drv =5v, v out =gnd 1.8 2.0 2.2 k w protections under - voltage protection threshold v out falling, v out /v in 65 70 75 % under - voltage protection debounce - 5 - m s i ocset ocset source current no load, v vinsel =1.5v, v en =5v, v ocset =18.9v 45 50 55 m a ocset offset voltage - 10 0 10 mv o ver - current debounce - 10 - m s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 4 e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) u n l e s s o t h e r w i s e s p e c i f i e d , t h e s e s p e c i f i c a t i o n s a p p l y o v e r v i n = 1 9 v , v e n = 5 v a n d t a = - 4 0 t o 8 5 o c . t y p i c a l v a l u e s a r e a t t a = 2 5 o c . APL3540 symbol parameter test conditions min. typ. max. unit protections (cont.) v drv(sc) short circuit protection threshold accuracy v drv - v out scp threshold tunable range: 2.5~3.5v, 0.1v/step - 100 - +100 mv vout input current v out =19v - 60 80 m a vout discharge resistance any fault condition and shutdown, v out =1v 1.5 1.75 2.0 k w en input en logic high threshold voltage v in =10v to 21v 0.8 - 1.5 v en hyteresis - 0.2 - v en pull - up current - 5 - m a pok output v pok(th) pok threshold v out rising, v out /v in , v pok =high 85 90 95 % pok hysteresis v out falling, v pok =low - 5 - % pok low voltage i pok =10ma - 0.2 0.5 v pok leakage current v pok =40v - - 1 m a t d(pok) pok rising delay time v out rising, pok assertion 8 11.5 15 ms
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 5 t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s vin uvlo threshold voltage vs. junction temperature v i n u v l o t h r e s h o l d v o l t a g e , v u v l o ( v ) junction temperature ( o c) 6.0 6.5 7.0 7.5 8.0 8.5 v in rising v in falling -50 0 50 100 150 v i n s e l d e t e c t i o n t h r e s h o l d , v v i n s e l ( v ) input voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v vinsel (h) v vinsel (l) vinsel detection threshold voltage vs. input voltage t a =25 o c 10 15 20 25 30 35 vinsel detection threshold voltage vs. junction temperature v i n s e l d e t e c t i o n t h r e s h o l d , v v i n s e l ( v ) 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 junction temperature ( o c) v vinsel (l) v vinsel (h) -50 0 50 100 150 s u p p l y c u r r e n t , i v i n ( m a ) supply current vs. input voltage en=high en=low v in =19v, r load =100 w , c in =0.1 m f/x7r, c out =1500 m f/electrolytic, 200 300 400 500 600 700 800 input voltage (v) 8 12 16 20 24 28 32 36
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 6 o p e r a t i n g w a v e f o r m s t h e t e s t c o n d i t i o n i s v i n = 1 9 v , t a = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d . p o w e r o n p o w e r o f f 3 1 2 4 v in v drv v out v pok 3 1 2 4 v pok v out v drv v in e n a b l e d i s a b l e 1 2 3 4 v en v drv v out v pok v out v in 1 2 3 4 v en v drv v out v pok ch1: v in , 5v/div, dc time: 10m s/div v in =19v, r load =100 w , r3 =51k w , c in =0.1 m f/x7r, c out =1500 m f/electrolytic, ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc ch4: v pok , 10v/div, dc ch1: v in , 5v/div, dc time: 0.5 s/div ch3: v out , 5v/div, dc ch4: v pok , 10v/div, dc ch2: v drv , 5v/div, dc v in =19v, r load =100 w , r3 =51k w , c in =0.1 m f/x7r, c out =1500 m f/electrolytic, ch1: v en , 5v/div, dc time: 5m s/div ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc ch4: v pok , 10v/div, dc v in =19v, r load =100 w , r3 =51k w , c in =0.1 m f/x7r, c out =1500 m f/electrolytic, ch1: v en , 5v/div, dc time: 50m s/div ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc ch4: v pok , 10v/div, dc v in =19v, r load =100 w , r3 =51k w , c in =0.1 m f/x7r, c out =1500 m f/electrolytic,
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 7 o p e r a t i n g w a v e f o r m s ( c o n t . ) t h e t e s t c o n d i t i o n i s v i n = 1 9 v , t a = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d . s o f t - s t a r t o v e r - c u r r e n t p r o t e c t i o n 3 1 2 4 v in v drv v out i out v bat v chrin i out 3 1 2 4 v in v drv v out i out s h o r t - c i r c u i t p r o t e c t i o n w r o n g v i n i n p u t v o l t a g e p r o t e c t i o n , v v i n s e l > v v i n s e l ( h ) ch1: v in , 5v/div, dc time: 50m s/div v in =25v, r1=24k w , r2 =2k w ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc 3 1 2 4 i out v out v drv v in 1 2,3 v drv and v out v in ch1: v in , 10v/div, dc time: 0.5ms/div ch2: v drv , 10v/div, dc ch3: v out , 10v/div, dc ch4: i out , 10a/div, dc v in =19v, r load =1 w , r ocset =1.5k w , c in =0.1 m f/x7r, c out =470 m f/electrolytic, ch1: v in , 10v/div, dc time: 2 ms/div ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc ch4: i out , 10a/div, dc v in =19v, r load =short to gnd before power-up , c in =0.1 m f/x7r, c out =470 m f/electrolytic ch1: v in , 5v/div, dc time: 10m s/div ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc ch4: i out , 1a/div, dc v in =19v, r load =100 w , c1=100nf, c in =0.1 m f/x7r, c out =1500 m f/electrolytic,
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 8 o p e r a t i n g w a v e f o r m s ( c o n t . ) t h e t e s t c o n d i t i o n i s v i n = 1 9 v , t a = 2 5 o c u n l e s s o t h e r w i s e s p e c i f i e d . p i n d e s c r i p t i o n pin no. name function 1 vin input supply pin. provides power to the ic, v in can range from 10v to 21v and should be bypassed with at least a 0.1 m f capacitor. 2 ocset over - current trip point adjustment pin. connect a resistor (r ocset ) from this pin to t he drain of the external mosfet to set the ocp trip point. 3 drv gate driver output. the gate driver for the external n - channel mosfet. 4 vout output voltage sense pin. connect this pin to the source of external n - channel mosfet to monitor the output vo ltage. 5 en enable input. pull ing t he v en above 2 v will en able the ic; pull ing v en below 0.6 v will dis able the ic. this pin is pulled high by an internal current source. 6 gnd ground. 7 pok power - okay indicator output. the pok is an open - drain pull - down device. when vout voltage is below the pok threshold, the pok output is pulled low; when vout voltage is above the pok threshold, the pok output is high impedance. 8 vinsel input voltage sense pin. connect a resistive divider from vin to vinsel to gnd to monitor the input voltage. this pin cannot be left floating. v in v drv v out v pok 1 2,3 v drv and v out v in ch1: v in , 5v/div, dc time: 20m s/div v in =12v, r1=24k w , r2 =2k w ch2: v drv , 5v/div, dc ch3: v out , 5v/div, dc w r o n g v i n i n p u t v o l t a g e p r o t e c t i o n , v v i n s e l < v v i n s e l ( l )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 9 b l o c k d i a g r a m t y p i c a l a p p l i c a t i o n c i r c u i t charge pump and gate driver uvlo logic control v in x0.7 5v ldo v in x0.9 v out t d(pok) 1.275v 1.8v pok vin vinsel drv vout 5v uvp bias+band-gap t d(on) ocset v out ocp pok scp v out v drv pok_wd en 5v clock generator gnd pok pok_wd 2.5~3.5v, 0.1v/step APL3540 vin drv vout vinsel en pok ocset gnd 0.1 m f on off 68nf 470 m f r1 r2 r3 r ocset c in c out c1 r5 c2 1nf 50k w 2k w 23.2k w 1% 1% 4k w adapter v out 19v (option) q1 ipd09n03l 4.7 w 1 2 3 4 5 6 7 8 r g 47 w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 0 f u n c t i o n d e s c r i p t i o n wrong vin input voltage protection t h e a p l 3 5 4 0 p r o v i d e s a n i n p u t v o l t a g e d e t e c t i o n f u n c - t i o n t o p r o t e c t a w r o n g i n p u t a d a p t e r i n s e r t i o n . c o n n e c t a r e s i s t i v e d i v i d e r f r o m v i n t o v i n s e l t o g n d t o s e t t h e t a r g e t i n p u t v o l t a g e . t h e t a r g e t i n p u t v o l t a g e i s s e t a t : v in(target) =1.5v x (1+r1/r2) the ic is enabled when input voltage is within the v in(target) 15% (v in also must above v uvlo and en is high); the device shuts down when input voltage is outside the v in (target) 20%. power-up the APL3540 has a built-in under-voltage lockout circuitry to keep the drv output shutting off until internal circuitry operates properly. the uvlo circuit has a hysteresis and a de-glitch feature so that it will typically ignore under- shoot transients on the input. when input voltage exceeds the uvlo threshold (v in also must within the v in(target) 10% and en is high) and after 7ms delay time, the drv output starts to charge the c1. the voltage at drv rises with a slope equals to 185 m a/ c1 and the vout output voltage rise time is set at: t ss =c1 x v in / 185 m a where t ss is the rise time of vout output voltage under-voltage protection (uvp) the vout pin monitors the output voltage. if the v out is under 70% of vin input voltage because of the short cir- cuit or other influences, it will cause the under-voltage protection and turn off ic, the vout voltage is also dis- charged to the gnd by an internal resistor, requiring a vin uvlo or en re-enable again to restart ic. note that the uvp is active after the power-up and pok are asserted. over-current protection (ocp) the APL3540 monitors the voltage across the external mosfet and uses the ocset pin to set the over-current trip point. a resistor (r ocset ) connected between ocset pin and the drain of the mosfet will determine the over current trip point. an internal 50 m a current source will flow through this resistor, creating a voltage drop, which will be com- pared with the voltage across the mosfet. pok output the power okay function monitors the output voltage and drives the pok low to indicate a fault. when a fault condi- tion such as over-current or under-voltage is occurred, the vout output voltage falls to 85% of vin input voltage and the pok is pulled low. when the vout output volt- age reaches to 90% of vin input voltage and after 10ms delay time, the pok is pulled high. since the pok is an open-drain device, connecting a resistor to a pull high voltage is necessary. an over-current condition will shut down the device and pull the v drv-out to low, the vout voltage is also discharged to the gnd by an internal resistor, requiring a vin uvlo or en re-enable again to restart ic. note that the ocp is active after the power-up and pok are asserted. when the voltage across the mosfet exceeds the volt- age drop across the r ocset , an over-current will be detected. the threshold of the over current is therefore given by: i ocp = i ocset x r ocset / r ds(on) for the over-current is never occurred in the normal oper- ating load range, the variation of all parameters in the above equation should be determined. - the mosfet?s r ds(on) is varied by temperature, the user should determine the maximum r ds(on) in manufacturer?s datasheet. - the minimum i ocset (45 m a) and minimum r ocset should be used in the above equation. s h o r t - c i r c u i t p r o t e c t i o n t h e a p l 3 5 4 0 m o n i t o r s d r v a n d v o u t v o l t a g e s f o r t h e s h o r t c i r c u i t d e t e c t i o n d u r i n g p o w e r - u p . w h e n t h e d i f f e r - e n c e i n v o l t a g e b e t w e e n d r v p i n a n d v o u t p i n i s a b o v e short circuit protection threshold, a s h o r t - c i r c u i t c o n d i t i o n i s d e t e c t e d a n d t h e d e v i c e w i l l b e s h u t d o w n . r e q u i r i n g a v i n u v l o o r e n r e - e n a b l e a g a i n t o r e s t a r t i c . c a u t i o n m u s t b e t a k e n w h e n s e l e c t i n g a p o w e r m o s f e t . i f a n u n s u i t a b l e m o s f e t i s u s e d , t h e s c p w i l l b e f a l s e l y a c t i v a t e d d u r i n g p o w e r - u p . a c o m p l e t e p o w e r - u p p a r t l y r e l i e s o n t h e c u r r e n t d r i v i n g c a p a c i t y o f t h e m o s f e t . i n t h e s t a r t u p o f v d r v w h i l e g a t e v o l t a g e s t a r t s t o r i s e , t h e m o s f e t s t a r t s t o c o n d u c t . i f t h e c u r r e n t v i a t h e m o s f e t i s i n s u f f i c i e n t t o s u p p l y f o r t h e n e e d s o f c o u t a n d r l o a d ,
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 1 shutdown control the APL3540 has an active-low shutdown function. pull- ing the v en above 2v will enable the ic; pulling v en below 0.6v will disable the ic and the pok is pulled low imme- diately (ignore the v pok(th) and t d(pok) ), the vout voltage is also discharged to the gnd by an internal resistor. en pin is pulled high by an internal current source and can be left floating. f u n c t i o n d e s c r i p t i o n ( c o n t . ) s h o r t - c i r c u i t p r o t e c t i o n ( c o n t . ) t h e v o u t v o l t a g e w i l l n o t f o l l o w t h e v d r v t o r i s e , e v e n t u a l l y , w h e n v d r v - v o u t > short circuit protection threshold , t h e s c p h a p p e n s . s i n c e t h e c o u t d e m a n d s t h e m o s t c u r r e n t d u r i n g p o w e r - u p , t h e s u p p l y i n g c u r r e n t v i a t h e m o s f e t s h o u l d s a t i s f y t h e f o l l o w i n g e q u a t i o n f o r a c o m p l e t i o n o f p o w e r - u p . i s u p p l y ( m a x ) > i c h a r g i n g w h e r e : i c h a r g i n g = c o u t x ( 1 8 5 m a / c 1 ) i supply(max) is the maximum supply current via the mosfet in the conditions of v gs = short circuit protec- tion threshold and v ds = v in -v out . i charging is the charging current of c out during soft-start. c out is output capacitor. c1, placed on the gate of mosfet is the capacitor that controls the ramp-up rate of output voltage during soft- start. 185 m a is the soft-start current driving from the drv pin during the power-up process. for example, if c out =1500 m f, c1=100nf, short circuit protection threshold=3.0v and v in =19v, the i charging de- manded by the output capacitor is 2.78a. the i supply(max) in the conditions of v gs = 3.0v and v ds = 19v (while v in -v out ? v in ) should be greater than the i charging . we set the safety margin that is 1.5 times greater than the demanded 2.78a, therefore, we can choose a mosfet that can de- liver at least 4.17a in such conditions.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 2 a p p l i c a t i o n i n f o r m a t i o n i n p u t c a p a c i t o r g a t e a n d o u t p u t c a p a c i t o r p o w e r m o s f e t s l a y o u t c o n s i d e r a t i o n w h i l e h o t p l u g - i n a n a c a d a p t e r , t h e i n d u c t i v e p e a k v o l t - a g e s e e n i n t h e v i n p i n c o u l d b e v e r y h i g h i f t h e r e i s n o a n y f i l t e r i n g m e a s u r e t a k e n . i t i s r e c o m m e n d e d t o p l a c e a 0 . 1 t o 1 m f c e r a m i c b y p a s s c a p a c i t o r a s c l o s e a s p o s s i b l e t o t h e v i n p i n . a n r c - f i l t e r , d e p i c t e d i n t h e a p p l i c a t i o n c i r c u i t , i s p r e f e r a b l e b e c a u s e b e t t e r p e r f o r m a n c e i n f i l t e r - i n g t h e p e a k v o l t a g e a n d n o i s e . n o t e t h a t t h e v o l t a g e r a t - i n g o f t h e i n p u t c a p a c i t o r m u s t b e g r e a t e r t h a n t h e m a x i - m u m v i n v o l t a g e . i t i s r e c o m m e n d e d t o p l a c e a c a p a c i t o r i n t h e g a t e o f e x - t e r n a l p o w e r m o s f e t t o c o n t r o l t h e s o f t - s t a r t r a t e o f o u t - p u t v o l t a g e , e s p e c i a l l y w h e n a h i g h - v a l u e o u t p u t c a p a c i - t o r i s u s e d . t h e g a t e c a p a c i t o r c a n r e d u c e t h e i n r u s h c u r - r e n t t o t h e o u t p u t c a p a c i t o r d u r i n g s o f t - s t a r t . i f t h e p o w e r s u p p l y c a n n o t s u p p o r t t h e i n r u s h c u r r e n t , t h e c o u t v o l t a g e w i l l b e c l a m p e d d u r i n g s o f t - s t a r t a n d s c p w i l l b e f a l s e l y a c t i v a t e d . t h e i n r u s h c u r r e n t m u s t b e c o n t r o l l e d w i t h i n p o w e r s u p p l y c u r r e n t c a p a b i l i t y b y u s i n g t h i s g a t e c a p a c i t o r . n o t e t h a t t h e v o l t a g e r a t i n g o f t h e g a t e c a p a c i t o r m u s t b e g r e a t e r t h a n t h e m a x i m u m v d r v v o l t a g e , w h e r e t h e v d r v a p p r o x i m a t e l y e q u a l s v i n + 5 v . a b u l k o u t p u t c a p a c i t o r , p l a c e d c l o s e t o t h e l o a d , i s r e c - o m m e n d e d t o s u p p o r t l o a d t r a n s i e n t c u r r e n t . p r e c a u t i o n s s h o u l d b e t a k e n w h e n a h i g h - v a l u e o u t p u t c a p a c i t o r i s u s e d t h e g a t e c a p a c i t o r c 1 ( s h o w n i n t h e a p p l i c a t i o n c i r c u i t ) m u s t b e m a t c h e d . a h i g h - v a l u e o u t p u t c a p a c i t o r w i t h a s m a l l - v a l u e c 1 w o u l d p r o b a b l y l e a d t o i n r u s h c u r - r e n t a n d e n d u p s c p l a t c h e d - o f f i n t h e s o f t - s t a r t p e r i o d . p l e a s e m a k e s u r e t h a t t h e g a t e c a p a c i t o r c 1 i s m a t c h e d w i t h a h i g h - v a l u e o u t p u t c a p a c i t o r . n o t e t h a t t h e v o l t a g e r a t i n g o f t h e o u t p u t c a p a c i t o r m u s t b e g r e a t e r t h a n t h e m a x i m u m v i n v o l t a g e . a p l 3 5 4 0 r e q u i r e s a n n - c h a n n e l m o s f e t t h a t i s u t i l i z e d a s a n o n / o f f s w i t c h . w h e n a m o s e f t i s s e l e c t e d , p l e a s e m a k e s u r e t h a t t h e r d s ( o n ) o f t h i s m o s f e t c a n m e e t y o u r m a x i m u m v o l t a g e d r o o p r e q u i r e m e n t i n f u l l l o a d c o n d i t i o n s . a n d a l s o m a k e s u r e t h a t t h e m o s f e t y o u s e l e c t c a n s a t i s f y t h e c u r r e n t d e l i v e r i n g r e q u i r e m e n t , d e - s c r i b e d i n t h e p a r a g r a p h o f s h o r t - c i r c u i t p r o t e c t i o n i n f u n c t i o n d e s c r i p t i o n . a n o t h e r i m p o r t a n t c r i t e r i o n f o r s e - l e c t i o n o f m o s f e t i s t h e m o s f e t m u s t b e o p e r a t e d w i t h i n i t s s a f e o p e r a t i o n a r e a i n y o u r a p p l i c a t i o n . t h e p a c k a g e t y p e o f t h e m o s f e t m u s t b e c h o s e n f o r e f f i c i e n t h e a t r e m o v a l . n o t e t h a t t h e v d s r a t i n g o f t h e m o s f e t y o u s e - l e c t e d m u s t b e g r e a t e r t h a n t h e v i n v o l t a g e a n d t h e v g s r a t i n g m u s t b e g r e a t e r t h a n v i n + 5 v . t h e p o w e r d i s s i p a t e d i n t h e m o s f e t w h i l e o n i s s h o w n i n t h e f o l l o w i n g e q u a t i o n : p d = i o 2 x r d s ( o n ) s e l e c t a p a c k a g e t y p e a n d h e a t s i n k t h a t m a i n t a i n s t h e j u n c t i o n t e m p e r a t u r e b e l o w t h e r a t i n g . f i g u r e 1 i l l u s t r a t e s t h e l a y o u t , w i t h b o l d l i n e s i n d i c a t i n g h i g h c u r r e n t p a t h s ; a n d t h e s e t r a c e s m u s t b e s h o r t a n d w i d e . t h e l a y o u t g u i d e l i n e s a r e l i s t e d a s b e l o w . 1 . p l a c e t h e i n p u t c a p a c i t o r s c i n f o r v i n n e a r p i n a s c l o s e a s p o s s i b l e . 2 . t h e t r a c e f r o m d r v t o t h e g a t e o f p o w e r m o s f e t s s h o u l d b e w i d e a n d s h o r t . 3 . p l a c e o u t p u t c a p a c i t o r c o u t n e a r t h e l o a d a s c l o s e a s p o s s i b l e . 4 . l a r g e c u r r e n t p a t h s m u s t h a v e w i d e a n d t h i c k t r a c e s , d e p i c t e d a s t h e b o l d l i n e s . 5 . t h e d r a i n o f t h e p o w e r m o s f e t s s h o u l d b e a l a r g e p l a n e f o r h e a t s i n k i n g . g a t e r e s i s t o r it is recommended to place a resistor r g , as shown in the typical application circuit, in the gate of external power mosfet to prevent occurrence of oscillation during pow- ering on. if the oscillation occurs, the scp or vinsel wrong voltage detection might be activated unexpectedly. the r g literally could stabilize the external mosfet to avoid oscillation. the r g can be in the range of 10~100 w . the recommended value is 47 w .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 3 a p p l i c a t i o n i n f o r m a t i o n ( c o n t . ) f i g u r e 1 . l a y o u t g u i d e l i n e s v in vin drv vout load ocset c1 r ocset c out c in APL3540 gnd l a y o u t c o n s i d e r a t i o n ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 4 p a c k a g e i n f o r m a t i o n s o p - 8 l view a 0 . 2 5 seating plane gauge plane note: 1. follow jedec ms-012 aa. 2. dimension ? d ? does not include mold flash, protrusions or gate burrs. mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. dimension ? e ? does not include inter-lead flash or protrusions. inter-lead flash and protrusions shall not exceed 10 mil per side. s y m b o l min. max. 1.75 0.10 0.17 0.25 0.25 a a1 c d e e1 e h l millimeters b 0.31 0.51 sop-8 0.25 0.50 0.40 1.27 min. max. inches 0.069 0.004 0.012 0.020 0.007 0.010 0.010 0.020 0.016 0.050 0 0.010 1.27 bsc 0.050 bsc a2 1.25 0.049 0 8 0 8 3.80 5.80 4.80 4.00 6.20 5.00 0.189 0.197 0.228 0.244 0.150 0.157 d e e e 1 see view a c b h x 4 5 a 2 a aaa c nx aaa 0.10 0.004
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 5 p a c k a g e i n f o r m a t i o n t d f n 2 x 2 - 8 s y m b o l min . max . 0 . 80 0 . 00 0 . 18 0 . 30 1 . 00 1 . 60 0 . 05 0 . 60 a a 1 b d d 2 e e 2 e l millimeters a 3 0 . 20 ref tdfn 2 x 2 - 8 0 . 30 0 . 45 1 . 00 0 . 008 ref min . max . inches 0 . 031 0 . 000 0 . 007 0 . 012 0 . 039 0 . 063 0 . 024 0 . 012 0 . 018 0 . 70 0 . 039 0 . 028 0 . 002 0 . 50 bsc 0 . 020 bsc 1 . 90 2 . 10 0 . 075 0 . 083 1 . 90 2 . 10 0 . 075 0 . 083 k 0 . 20 0 . 008 note : 1 . followed from jedec mo - 229 wccd - 3 . e l k e 2 pin 1 corner d 2 a 3 a 1 b a e d nx aaa c seating plane 0 . 08 0 . 003 aaa
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 6 c a r r i e r t a p e & r e e l d i m e n s i o n s a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 h t1 a d application a h t1 c d d w e1 f 330.0 ? 2.00 50 min. 12.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 12.0 ? 0.30 1.75 ? 0.10 5.5 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 sop - 8 4.0 ? 0.10 8.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.5 min. 0.6+0.00 - 0.40 6.40 ? 0.20 5.20 ? 0.20 2.10 ? 0.20 application a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.20 1.75 ? 0.10 3.50 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 tdfn2x2 - 8 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.5 min. 0.6+0.00 - 0.4 3.35 min 3.35 min 1.30 ? 0.20 (mm) d e v i c e s p e r u n i t package type unit quantity sop - 8 tape & reel 2500 tdfn2x2 - 8 tape & reel 3000
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 7 t a p i n g d i r e c t i o n i n f o r m a t i o n s o p - 8 user direction of feed t d f n 2 x 2 - 8 user direction of feed
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 8 c l a s s i f i c a t i o n p r o f i l e profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. c l a s s i f i c a t i o n r e f l o w p r o f i l e s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 9 - o c t . , 2 0 1 3 a p l 3 5 4 0 w w w . a n p e c . c o m . t w 1 9 c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . ) table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c holt jesd - 22, a108 1000 hrs, bias @ t j =125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c hbm mil - std - 883 - 3015.7 vhbm ? 2kv mm jesd - 22, a1 15 vmm ? 200v latch - up jesd 78 10ms, 1 tr ? 100ma c u s t o m e r s e r v i c e a n p e c e l e c t r o n i c s c o r p . head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 t a i p e i b r a n c h : 2 f , n o . 1 1 , l a n e 2 1 8 , s e c 2 j h o n g s i n g r d . , s i n d i a n c i t y , t a i p e i c o u n t y 2 3 1 4 6 , t a i w a n t e l : 8 8 6 - 2 - 2 9 1 0 - 3 8 3 8 f a x : 8 8 6 - 2 - 2 9 1 7 - 3 8 3 8

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